A3126V is an Agilent RF power transistor. It is a NPN silicon bipolar transistor with a maximum collector-emitter voltage of 60V and a maximum collector current of 6A. It is designed for use in RF power amplifiers operating up to 500MHz. It is suitable for use in wireless base station applications such as GSM, CDMA, WCDMA, and LTE. It features high gain, low noise, and high power density. It also has a low thermal resistance and a wide operating temperature range.(For reference only)
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