UTSOURCE2MBI50N-120 is an insulated gate bipolar transistor (IGBT) module manufactured by Fuji Electric. It is a high-speed switching device with a maximum collector-emitter voltage of 1200V and a collector current of 50A. This module is suitable for use in motor control, welding, and other power supply applications. It features a low on-state voltage drop, low switching loss, and high surge current capability. It also has a built-in temperature sensor and overcurrent protection.(For reference only)2MBI50N-120 is a module manufactured by Fuji Electric. It is an IGBT module with a rated current of 50A and a rated voltage of 1200V. It is designed for use in power conversion applications such as motor control, UPS, and inverters. It features low on-state voltage, low switching loss, and high reliability. It is suitable for use in high-speed switching applications.
