Description: The MC10H211L is a high-speed, low-power, CMOS, dual 4-input NAND gate.Features:- High-speed performance: tpd = 4.5 ns (typical) at VDD = 5 V- Low power consumption: ICC = 1.0 μA (maximum) at TA = 25°C- High noise immunity: 0.45 VDD (minimum)- ESD protection: > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200 pF, R = 0)Applications:- Clock generation- Pulse generation- Data transmission- Signal gating- Address decoding- Data storage(For reference only)
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