Description: FQB50N06 is a N-channel MOSFET transistor manufactured by FAIRC. It has a maximum drain-source voltage of 60V, a maximum drain current of 50A, and a maximum gate-source voltage of 20V.

Features:
Low on-resistance
Low gate charge
High current capability
Low gate-source threshold voltage

Applications:
Switching applications
DC-DC converters
Motor control
Power management
(For reference only)