Description: The MG100J2YS50 is a 1200V, 100A IGBT module manufactured by Toshiba. It is a two-terminal, insulated gate bipolar transistor (IGBT) module with a built-in diode. Features: High speed switching Low on-state resistance Low noise Low power loss High surge current capability Low inductance High reliability Applications: The MG100J2YS50 is suitable for a wide range of applications, including motor control, power supplies, UPS systems, solar inverters, and other power conversion applications.(For reference only)Toshiba MG100J2YS50 is an insulated gate bipolar transistor (IGBT) module.Features:\r\n High speed switching\r\n Low power loss\r\n High reliability\r\n Low noise\r\n High surge capability\r\n Low inductance\r\n Low on-state voltage\r\n High current capacityApplications:\r\n Motor control\r\n Inverter\r\n Uninterruptible power supply (UPS)\r\n Switching power supply\r\n Automotive applications(For reference only)
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