Description: This is an insulated gate bipolar transistor (IGBT) module manufactured by International Rectifier (IR). It is a three-phase inverter bridge module with a maximum collector-emitter voltage of 600V and a maximum collector current of 20A. Features: Low switching losses High speed switching Low EMI High current handling capability High voltage capability Low on-state resistance Low gate charge Low thermal resistance Applications: Motor control Uninterruptible power supplies Power supplies Solar inverters Industrial automation Home appliances(For reference only)
https://www.utsource.net/itm/p/683058.html